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1.High speed Datacenter
2.Low dependence of electrical and optical characteristics over temperature
Specification:
Threshold current:0.8-2mA
Output power:1.2-1.8mW
Slope efficiency:0.35-0.55mW/mA
Operating voltage:1.9V
Resistance:35-65Ω
Wavelength:840-860nm
Spectral bandwidth:0.5nm
Bean divergence:25-30 deg.
relative intensity noise:-130 dB/Hz
Absolute maximum rating :
Storage temperature:-40--100℃
Operating temperature:0-85℃
Continuous forward current:12mA
Soldering temperature:260℃
Chip dimensions:
Chip size:250x230x150μm(t)+-15μm
Bonding pad:μm=100μm
Package:
1 X 850nm 1.8mw Laser Diode
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